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RJP3067DPK - IGBT

Download the RJP3067DPK datasheet PDF. This datasheet also covers the RJP3053DPP variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on resistance, High-speed switching Low Qg, Low Qgd Merits High efficiency Small package, Built-in 2 elements Mniaturization Example of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RJP3053DPP_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
RJP30E2 N-Channel Power MOSFET Renesas
RJP30E2DPK-M0 N-Channel Power MOSFET Renesas
RJP30E2DPP-M0 N-Channel Power MOSFET Renesas
RJP30E3DPK-M0 N-Channel Power MOSFET Renesas
RJP30E3DPP-M0 N-Channel Power MOSFET Renesas

Other Datasheets by Renesas

Part Number Description
RJP3063DPP IGBT
RJP3064DPP IGBT
RJP3065DPP IGBT
RJP3066DPK IGBT
RJP3053DPP IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit High Intensity High pressure Gas High Efficiency Addressing IC Optimum FET Low Cost TV/PC Signal PDP Signal processing Timing control Power supply IGBT Product Lineup Power MOSFET P/N H7N1005LS H7N1004LS H5N2301PF H5N2306PF H5N2305PF H5N2509P H5N2503P H5N3004P H5N3007LS H5N3003P H5N3504P VDSS (V) 100 100 230 230 230 250 250 300 300 300 350 Maximum Rating ID (A) 15 30 25 30 35 30 50 25 25 40 20 VGS (V) ±20 ±20 ±30 ±30 ±30 ±30 ±30 ±30
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