Datasheet4U Logo Datasheet4U.com

RJK03E1DNS - Silicon N Channel Power MOS FET

General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • REJ03G1903-0200 Rev.2.00 Apr 06, 2010 Outline.

📥 Download Datasheet

Datasheet Details

Part number RJK03E1DNS
Manufacturer Renesas
File Size 174.92 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK03E1DNS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJK0305DPB-02 Silicon N-Channel Power MOSFET Renesas
RJK0323JPD Silicon N-Channel MOS FET Renesas
RJK0328DPB-01 Silicon N-Channel MOS FET Renesas
RJK0330DPB-01 Silicon N-Channel MOSFET Renesas
RJK0332DPB-01 Silicon N-Channel MOS FET Renesas

Other Datasheets by Renesas

Part Number Description
RJK03E0DNS Silicon N Channel Power MOS FET
RJK03E2DNS Silicon N Channel Power MOS FET
RJK03E3DNS Silicon N Channel Power MOS FET
RJK03E4DPA Silicon N Channel Power MOS FET
RJK03E5DPA Silicon N Channel Power MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary www.DataSheet4U.com Datasheet RJK03E1DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1903-0200 Rev.2.00 Apr 06, 2010 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.