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RJK03B9DPA - Silicon N Channel Power MOS FET Power Switching

General Description

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Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • REJ03G1791-0320 Rev.3.20 May 12, 2010 Outline.

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Datasheet Details

Part number RJK03B9DPA
Manufacturer Renesas
File Size 111.85 KB
Description Silicon N Channel Power MOS FET Power Switching
Datasheet download datasheet RJK03B9DPA Datasheet

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Full PDF Text Transcription (Reference)

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Preliminary Datasheet RJK03B9DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1791-0320 Rev.3.20 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.