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RJE0605JPD - Silicon P Channel MOS FET Series Power Switching

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Features

  • Logic level operation (.
  • 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on): 58 m Typ, 75 m Max (VGS =.
  • 10 V) Outline.

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Datasheet Details

Part number RJE0605JPD
Manufacturer Renesas Technology
File Size 107.28 KB
Description Silicon P Channel MOS FET Series Power Switching
Datasheet download datasheet RJE0605JPD Datasheet
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Preliminary Datasheet RJE0605JPD Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1803-0100 Rev.1.00 Apr 01, 2010 Features       Logic level operation (–6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit.
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