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HAT2268C - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance RDS(on) = 27 mΩ typ. (at VGS = 10 V).
  • Low drive current.
  • High density mounting.
  • 4.5 V gate drive devices. Outline.

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Datasheet Details

Part number HAT2268C
Manufacturer Renesas
File Size 73.01 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2268C Datasheet

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Full PDF Text Transcription

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HAT2268C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 27 mΩ typ. (at VGS = 10 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1354-0200 Rev.2.00 Feb 28, 2006 23 45 DD DD 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse)Note1 Body - Drain diode reverse drain current Channel dissipation IDR PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.
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