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HAT2265H - Silicon N-Channel Power MOSFET

Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V).
  • Lead Free Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.0.00, Sept.2004, page 1 of 5 www. DataSheet4U. com HAT2265H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode.

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Datasheet Details

Part number HAT2265H
Manufacturer Renesas
File Size 69.30 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2265H Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) • Lead Free Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.0.00, Sept.2004, page 1 of 5 www.DataSheet4U.
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