Datasheet4U Logo Datasheet4U.com

HAT2205C - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V).
  • Low drive current.
  • High density mounting.
  • 1.8 V gate drive devices. Outline.

📥 Download Datasheet

Datasheet Details

Part number HAT2205C
Manufacturer Renesas
File Size 178.13 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2205C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HAT2201RJ N-Channel 100V MOSFET VBsemi
HAT200-S (HAT200-S - HAT1500-S) Current Transducer LEM
HAT2016R Silicon N-Channel Power MOSFET Hitachi Semiconductor
HAT2016R Silicon N-Channel Power MOSFET Renesas
HAT2016R Dual N-Channel 30V MOSFET VBsemi

Other Datasheets by Renesas

Part Number Description
HAT2200R Silicon N-Channel Power MOSFET
HAT2200WP Silicon N-Channel Power MOSFET
HAT2201R Silicon N-Channel Power MOSFET
HAT2201WP Silicon N-Channel Power MOSFET
HAT2202C Silicon N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
HAT2205C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 Data Sheet R07DS1181EJ0500 (Previous: REJ03G1237-0400) Rev.5.00 Mar 19, 2014 23 45 DD DD 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)Note1 Body - Drain diode reverse drain current Channel dissipation IDR PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.
Published: |