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HAT2201WP - Silicon N-Channel Power MOSFET

Features

  • Capable of 8 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline Preliminary Datasheet REJ03G1679-0310 Rev.3.10 May 21, 2010.

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Datasheet Details

Part number HAT2201WP
Manufacturer Renesas
File Size 84.59 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2201WP Datasheet

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Full PDF Text Transcription

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HAT2201WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 8 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline Preliminary Datasheet REJ03G1679-0310 Rev.3.10 May 21, 2010 RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 5 678 D DDD 4 4 32 1 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25°C, Rg  50  3.
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