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HAT2204C
Silicon N Channel MOS FET Power Switching
REJ03G0448-0500 Rev.5.00 May 10, 2007
Features
• Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3
2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Pch Note2 Tch Tstg
Note1
Ratings 12 ±8 3.5 14 3.5 900 150 –55 to +150
Unit V V A A A mW °C °C
Notes: 1.
HAT2204C Datasheet
