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HAT2092R - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting Outline SOP-8 8 7 65 1 234 78 DD 2 4 G G S1 MOS1 56 DD S3 MOS2 REJ03G0511-0300 (Previous ADE-208-1236A(Z)) Rev.3.00 Jan.13.2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 ID(pulse)Note1 88 Body.

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Datasheet Details

Part number HAT2092R
Manufacturer Renesas
File Size 75.05 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2092R Datasheet

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Full PDF Text Transcription

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HAT2092R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 8 7 65 1 234 78 DD 2 4 G G S1 MOS1 56 DD S3 MOS2 REJ03G0511-0300 (Previous ADE-208-1236A(Z)) Rev.3.00 Jan.13.2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 ID(pulse)Note1 88 Body–drain diode reverse drain current IDR 11 Channel dissipation Pch Note2 2 Channel dissipation Pch Note3 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
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