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HAT2096H - Silicon N-Channel Power MOSFET

Features

  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 HAT2096H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, dut.

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Full PDF Text Transcription

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HAT2096H Silicon N Channel Power MOS FET Power Switching ADE-208-1431B (Z) 3rd. Edition Aug. 2002 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 HAT2096H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 40 160 40 20 150 –55 to + 150 Unit V V A A A W °C °C Rev.2, Aug.
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