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HAT1095C
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 108 mΩ typ. (at VGS = –4.5 V)
• Low drive current. • 1.8 V gate drive devices. • High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Indexband 5 4 6
3 2 1
Data Sheet
R07DS1174EJ0600 (Previous: REJ03G1232-0500)
Rev.6.00 Mar 19, 2014
2 34 5 D DD D
6 G
S 1
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
VDSS
–12
Gate to Source voltage
VGSS
±8
Drain current Drain peak current
ID
–2
ID(pulse)Note1
–8
Body - Drain diode reverse drain current
IDR
–2
Channel dissipation
PchNote 2
830
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1.
HAT1095C Datasheet
