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HAT1065R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of –4 V gate drive • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
8 7 65
2
G
1 234
78 DD
4 G
S1 MOS1
56 DD
S3 MOS2
REJ03G0579-0200 Rev.2.00
Apr 04, 2006
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
–200
Gate to source voltage
VGSS
±15
Drain current Drain peak current
ID ID(pulse)Note1
–0.25 –1
Body-drain diode reverse drain current Channel dissipation
IDR Pch Note2 Pch Note3
–0.25 1.3 2
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2.
HAT1065R Datasheet
