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HAT1055R, HAT1055RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0067-0100Z Rev.1.00 Aug.29.2003
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Features
• • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating
Outline
SOP-8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
Rev.1.00, Aug.29.2003, page 1 of 9
HAT1055R, HAT1055RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings HAT1055R Drain to source voltage Gate to source voltage Drain current
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Unit HAT1055RJ –60 ±20 –5 –40 –5 2.