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H7N0608LM - Silicon N-Channel MOSFET

Download the H7N0608LM datasheet PDF. This datasheet also covers the H7N0608L variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on-resistance RDS(on) = 6.0 mΩ typ.
  • Low drive current.
  • Available for 4.5 V gate drive Outline LDPAK D 4 4 4 G 1 S 1 2 1 3 2 3 2 H7N0608LS H7N0608LM 3 H7N0608LD 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Oct.30.2003, page 1 of 11 H7N0608LD, H7N0608LS, H7N0608LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalan.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7N0608L_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H7N0608LM
Manufacturer Renesas
File Size 144.49 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet H7N0608LM Datasheet

📁 Similar Datasheet

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Other Datasheets by Renesas

Part Number Description
H7N0608L Silicon N-Channel MOSFET
H7N0608LD Silicon N-Channel MOSFET
H7N0608LS Silicon N-Channel MOSFET
H7N0608AB Silicon N-Channel MOSFET
H7N0608FM Silicon N-Channel MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com H7N0608LD, H7N0608LS, H7N0608LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0144-0100Z Rev.1.00 Oct.30.2003 Features • Low on-resistance RDS(on) = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline LDPAK D 4 4 4 G 1 S 1 2 1 3 2 3 2 H7N0608LS H7N0608LM 3 H7N0608LD 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Oct.30.
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