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H7N0608FM
Silicon N Channel MOS FET Power Switching
REJ03G0165-0100Z Rev.1.00 Dec.04.2003
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Features
• Low on-resistance RDS(on) = 6.5 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
Rev.1.00, Dec.04.2003, page 1 of 9
H7N0608FM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current
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Symbol VDSS VGSS ID ID (pulse) IDR IAP
Note3 Note1
Ratings 60 ±20 50 200 50 40 137 30 150 –55 to +150
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature
EARNote3 Pch Tch Tstg
Note2
Notes: 1.