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RM4P20ES6 - P-Channel Enhancement Mode Power MOSFET

General Description

The RM4P20ES6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -4.1A RDS(ON) 2000V High power and current handing capability Lead free product is acquired Surface mount package.

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Datasheet Details

Part number RM4P20ES6
Manufacturer Rectron
File Size 623.73 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM4P20ES6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RM4P20ES6 P-ChannelEnhancement Mode Power MOSFET Description The RM4P20ES6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G General Features VDS = -20V,ID = -4.1A RDS(ON) <80m Ω @ VGS=-2.5V RDS(ON) GS=-4.