Datasheet Details
| Part number | RM4N650TI |
|---|---|
| Manufacturer | Rectron |
| File Size | 961.44 KB |
| Description | N-Channel Super Junction Power MOSFET |
| Datasheet |
 RM4N650TI Datasheet
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General Description
technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Key Features
- ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant VDS@Tjmax 650 V RDS(ON) MAX 1200 mΩ ID 4 A.