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RM2N650IP - N-Channel Super Junction Power MOSFET II

Description

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

  • ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant.

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Datasheet Details

Part number RM2N650IP
Manufacturer Rectron
File Size 665.00 KB
Description N-Channel Super Junction Power MOSFET II
Datasheet download datasheet RM2N650IP Datasheet
Additional preview pages of the RM2N650IP datasheet.

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Full PDF Text Transcription

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RM2N650IP RM2N650LD N-Channel Super Junction Power MOSFET Ċ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant Application ƽ Power factor correction˄PFC˅ ƽ Switched mode power supplies(SMPS) ƽ Uninterruptible Power Supply˄UPS˅ VDS@Tjmax RDS(ON) TYP ID 710 2.
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