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RM2312 - N-Channel Enhancement Mode Power MOSFET

Description

The RM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

  • VDS = 20V,ID = 4.5A RDS(ON) < 45mΩ @ VGS=1.8V RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package.

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Datasheet preview – RM2312

Datasheet Details

Part number RM2312
Manufacturer Rectron
File Size 171.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM2312 Datasheet
Additional preview pages of the RM2312 datasheet.

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Full PDF Text Transcription

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RM2312 N-Channel Enhancement Mode Power MOSFET Description The RM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features VDS = 20V,ID = 4.5A RDS(ON) < 45mΩ @ VGS=1.8V RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package Application Battery protection Load switch Power management Package:3K/Reel,9K/Box,72K/Carton Halogen-free P/N suffix V means AEC-Q101 qualified, e.
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