RM2312 Description
The RM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
- Part: RM2312
- Manufacturer: Rectron
- Size: 171.80 KB
Related Rectron Datasheets
| Part Number | Description |
|---|---|
| RM20N150LD | N-Channel Super Trench Power MOSFET |
| RM2N650IP | N-Channel Super Junction Power MOSFET II |
| RM2N650LD | N-Channel Super Junction Power MOSFET II |