BAV19
FEATURES
- Silicon epitaxial planar diode
- DO-35 Package,glass case
- High speed switching diode
- 500 m W power dissipation
- Polarity: Color band denotes cathode
DO-35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified.
1.083 (27.5) TYP.
.022 (0.6 ) DIA.
.018 (0.46)
.150 (3.8) MAX.
1.083 (27.5) TYP.
.087 (2.2) DIA.
MAX.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
BAV17 BAV18 BAV19
Reverse voltage Peak reverse voltage Average forw ard rectified current
Half w ave rectification w ith resist.load
I(AV)
2501)
@TA=25 and f 50Hz Forw ard surge current @ t<1s and TJ=25 Pow er dissipation @ TA=25 Thermal resistance junction to ambient
Junction temperature
Storage temperature range
IFSM Ptot RθJA TJ TSTG
1.0 5001) 350 175 -55 --- +175
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard...
