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SCS320AHG - SiC Schottky Barrier Diode

Features

  • 1) Shorter recovery time 650V 20A 47nC.
  • Outline TO-220ACP (1).
  • Inner Circuit (2) (3) (1) 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability (1) Cathode (2) Cathode (3) Anode (2) (3).
  • Construction Silicon carbide epitaxial planar type.
  • Packaging Specifications Packaging Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 50 Packing code C9 Marking SCS320AH.
  • Absolute Maximum Ratings (Tj = 25°.

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Datasheet Details

Part number SCS320AHG
Manufacturer ROHM
File Size 1.14 MB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS320AHG Datasheet
Additional preview pages of the SCS320AHG datasheet.

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Full PDF Text Transcription

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SCS320AHG SiC Schottky Barrier Diode Datasheet VR IF QC Features 1) Shorter recovery time 650V 20A 47nC Outline TO-220ACP (1) Inner Circuit (2) (3) (1) 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability (1) Cathode (2) Cathode (3) Anode (2) (3) Construction Silicon carbide epitaxial planar type Packaging Specifications Packaging Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 50 Packing code C9 Marking SCS320AH Absolute Maximum Ratings (Tj = 25°C ) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current (Tc=125°C) Surge nonrepetitive forward current PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C Repetitive peak forward
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