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SCS302AP - SiC Schottky Barrier Diode

Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability.
  • Construction Silicon carbide epitaxial planar type.
  • Outline TO-220ACP (1) Datasheet.
  • Inner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3).
  • Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking Tube 50 C9 SCS302AP.
  • Absolute maximum ratings (Tj = 25°C) Parameter Sym.

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Datasheet Details

Part number SCS302AP
Manufacturer ROHM
File Size 935.07 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS302AP Datasheet
Additional preview pages of the SCS302AP datasheet.

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Full PDF Text Transcription

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SCS302AP SiC Schottky Barrier Diode VR 650V IF 2A QC 6nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability Construction Silicon carbide epitaxial planar type Outline TO-220ACP (1) Datasheet Inner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking Tube 50 C9 SCS302AP Absolute maximum ratings (Tj = 25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Continuous forward current (Tc= 145°C) IF Surge nonrepetitive forward current PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C Repetitive peak for
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