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RB218T150FH - Schottky Barrier Diode

Features

  • 1) Cathode common dual type 2) High reliability 3) Super low IR.
  • Construction Silicon epitaxial planar type.
  • Dimensions (Unit : mm) 10.0±00..31 3.2±0.2 4.5±00..31 2.8±00..21 15.0±00..24 12.0±0.2 5.0±0.2 8.0±0.2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) ROHM : TO220FN 1 : Manufacture date 14.0±0.5 2.6±0.5 0.75±00..015 Datasheet AEC-Q101 Qualified.
  • Structure (1) (2) (3) Anode Cathode Anode.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reve.

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Datasheet Details

Part number RB218T150FH
Manufacturer ROHM
File Size 735.22 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB218T150FH Datasheet
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Full PDF Text Transcription

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Schottky Barrier Diode RB218T150FH Application Switching power supply Features 1) Cathode common dual type 2) High reliability 3) Super low IR Construction Silicon epitaxial planar type Dimensions (Unit : mm) 10.0±00..31 3.2±0.2 4.5±00..31 2.8±00..21 15.0±00..24 12.0±0.2 5.0±0.2 8.0±0.2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) ROHM : TO220FN 1 : Manufacture date 14.0±0.5 2.6±0.5 0.75±00..015 Datasheet AEC-Q101 Qualified Structure (1) (2) (3) Anode Cathode Anode Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak VRM VR Io IFSM Operating junction temperature Storage temperature Tj Tstg Conditions Duty≦0.
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