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RB218T100 - Schottky Barrier Diode

Features

  • 1) Cathode common type r 2) High reliability o 3) Super low IR d f lConstruction de Silicon epitaxial planar type 15.0± 0. 4 0. 2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 5.0±0.2 8.0±0.2 14.0±0.5 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date (1) (2) (3) Anode Cathode Anode men igns lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol s Repetitive peak reverse voltage VRM m e Reverse voltage VR o D Average forward rectified current Io c Non-repetitive forward curre.

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Datasheet Details

Part number RB218T100
Manufacturer ROHM
File Size 545.12 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB218T100 Datasheet
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Schottky Barrier Diode RB218T100 Data Sheet lApplication Switching power supply lDimensions (Unit : mm) 4.5±00..31 lStructure 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 12.0±0.2 lFeatures 1) Cathode common type r 2) High reliability o 3) Super low IR d f lConstruction de Silicon epitaxial planar type 15.0± 0. 4 0. 2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 5.0±0.2 8.0±0.2 14.0±0.5 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date (1) (2) (3) Anode Cathode Anode men igns lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol s Repetitive peak reverse voltage VRM m e Reverse voltage VR o D Average forward rectified current Io c Non-repetitive forward current surge peak IFSM e Operating junction temperature Tj w Storage temperature Tstg Conditions Duty≦0.
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