Click to expand full text
Data Sheet
Schottky Barrier Diode
RRBB16186M2M-4-03T0F
AEC-Q101 Qualified
2.6±0.1 3.5±0.2
lApplications General rectification
lFeatures
lExternal Dimensions(Unit : mm)
1.6±0.1
0.1±0.1 0.05
for lLand Size Figure(Unit : mm)
1)Small power mold type.(PMDU) 2)High reliability
ed lConstruction mendigns Silicon epitaxial
PMDU
0.9±0.1
ROHM : PMDU JEDEC :SOD-123
Manufacture Date
0.8±0.1
lStructure
lTaping Dimensions(Unit : mm)
4.0±0.1 2.0±0.05
φ 1.55±0.05
0.25±0.05
1.75±0.1
com Des 1.81±0.1
e w lAbsolute Maximum Ratings(Ta=25°C)
R e Parameter
Reverse voltage (repetitive)
t N Reverse voltage (DC) o Average rectified forward current (*1)
Forward current surge peak (60Hz1cyc)
NJunction temperature
Symbol VRM VR Io IFSM Tj
4.0±0.1
φ 1.0±0.