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RF3376 - General Purpose Amplifier

General Description

The RF3376 is a general purpose, low-cost RF amplifier IC.

The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block.

Key Features

  • DC to >6000MHz Operation.
  • Internally Matched Input and Output.
  • 22dB Small Signal Gain.
  • +2.0dB Noise Figure.
  • +11dBm Output P1dB.
  • Useable with 5V Supply.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF3376General Purpose Amplifier RF3376 General Purpose Amplifier Package Style: SOT8 Features  DC to >6000MHz Operation  Internally Matched Input and Output  22dB Small Signal Gain  +2.0dB Noise Figure  +11dBm Output P1dB  Useable with 5V Supply Applications  Basestation Applications  Broadband, Low-Noise Gain Blocks  IF or RF Buffer Amplifiers  Driver Stage for Power Amplifiers  Final PA for Low-Power Applications  High Reliability Applications RF IN GND RF OUT GND 4 123 Functional Block Diagram Product Description The RF3376 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block.