RF3300-2 Datasheet | RF Micro Devices

Description The RF3300-2 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3300-2 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The RF3300-2 contains a temperature pensating bias circuit to improve performance over temperature. 7.375 TYP 6.775 6.575 TYP 5.875 TYP 3V 900MHz LINEAR AMPLIFIER MODULE - Designed for patibility with Qualm Chipsets 5.075 TYP 4.375 TYP NOTES: Nominal thickness, 1.55 mm. Note orientation of Pin 1. 3.575 TYP...