CDD10810 Datasheet PDF - Powerex Power Semiconductors Dual Diode POW-R-BLOK Modules 100 Amperes/800 Volts Specs

CDD10810 - Dual Diode POW-R-BLOK Modules 100 Amperes/800 Volts

Datasheet Summary

Description

Powerex Dual Diode POW-R-BLOK™ Modules are designed for use in applications requiring AC to DC rectification in isolated packaging.

The modules are isolated for easy mounting with other components on common heatsinks.

Features

Ⅺ Isolated Mounting Ⅺ Glass Passivated Chips Outline Drawing Ⅺ Metal Baseplate Ⅺ Low Thermal Impedance Millimeters 93.5 Max. 80 30 Max. 26 Max. 21 20 17.5 12.5 6.5 Dia. 6.5 M5 Dimension A B C D E F G H J K L Inches 3.68 Max. 3.150 1.181 Max. 1.024 Max. 0.827 0.787 0.689 0.492 0.256 0.256 Dia. M5 Metric Ⅺ UL Recognized A.

Datasheet Details

Part number	CDD10810
Manufacturer	Powerex Power Semiconductors
File Size	71.83 KB
Description	Dual Diode POW-R-BLOK Modules 100 Amperes/800 Volts
Datasheet	CDD10810 Datasheet
Additional preview pages of the CDD10810 datasheet.

📁 Similar Datasheet

CDD120 - Diode (DEE)

CDD120N08 - Diode (DEE)

CDD120N12 - Diode (DEE)

CDD120N14 - Diode (DEE)

CDD120N16 - Diode (DEE)

CDD120N18 - Diode (DEE)

CDD2395 - NPN Silicon Epitaxial Power Transistor (CDIL)

CDDFN10-0516P - Surface Mount TVS Diode Array (BOURNS)

CDDFN10-2574N - Surface Mount TVS Diode Array (BOURNS)

CDDFN10-3304NA - TVS/Steering Diode Array (BOURNS)

Full PDF Text Transcription

Click to expand full text

CDD10810 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual Diode POW-R-BLOK™ Modules 100 Amperes/800 Volts A B 1 2 3 H K - DIA. (2 TYP.) D G E E L - M5 THD (3 TYP.) C A F J 1 2 3 CDD10810 Dual Diode POW-R-BLOK™ Modules 100 Amperes/800 Volts Description: Powerex Dual Diode POW-R-BLOK™ Modules are designed for use in applications requiring AC to DC rectification in isolated packaging. The modules are isolated for easy mounting with other components on common heatsinks. POW-R-BLOK™ has been tested and recognized by Underwriters Laboratories (QQQX2 Power Switching Semiconductors). Features: Ⅺ Isolated Mounting Ⅺ Glass Passivated Chips Outline Drawing Ⅺ Metal Baseplate Ⅺ Low Thermal Impedance Millimeters 93.5 Max. 80 30 Max. 26 Max. 21 20 17.

Published: Mar 23, 2005 |