CDD2395 - NPN Silicon Epitaxial Power Transistor

Description

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak (pulse) PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range DataSheet4U.com Single Pulse Pw=100

CDIL

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Datasheet Details

Part number	CDD2395
Manufacturer	CDIL
File Size	250.99 KB
Description	NPN Silicon Epitaxial Power Transistor
Datasheet	CDD2395 Datasheet
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www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 (9AW) TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP* Peak (pulse) PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range DataSheet4U.

Published: Aug 21, 2006 |