Datasheet Details
| Part number | PDN6912S |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 723.66 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PDN6912S Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 60V,3.2A, RDS(ON) =75mΩ@VGS = 10V.
- Improved dv/dt capability.
- Fast switching.
- 100% EAS Guaranteed.
- Green Device Available.