PDN0954S - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

100V,1.4A , RDS(ON)=350mΩ@VGS=10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

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PDN0954S n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDN0954S
Manufacturer	Potens semiconductor
File Size	680.61 KB
Description	N-Channel MOSFETs
Datasheet	PDN0954S Datasheet

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100V N-Channel MOSFETs PDN0954S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23S Pin Configuration D D S G G S BVDSS 100V RDSON 350m ID 1.4A Features  100V,1.