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SA1920 - Dual-band RF front-end

Description

The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz fT BiCMOS process

QUBiC1.

The low-band is a combined low-noise amplifier (LNA) and mixer.

Features

  • Low current consumption.
  • Outstanding low- and high-band noise figure.
  • Excellent gain stability versus temperature and supply.
  • Image reject high-band mixer with over 30 dB of rejection.
  • Increased low-band LNA gain compression during analog.
  • LO input and output buffers.
  • Frequency doubler.
  • On chip logic for network selection and power down.
  • Very small outline package.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
SA1921 Satellite and cellular dual-band RF front-end
SA1458 General purpose operational amplifier
SA1458D General purpose operational amplifier
SA1458N General purpose operational amplifier
SA1620 Low voltage GSM front-end transceiver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INTEGRATED CIRCUITS SA1920 Dual-band RF front-end Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook 1999 Mar 02 Philips Semiconductors Philips Semiconductors Product specification Dual-band RF front-end SA1920 DESCRIPTION The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz fT BiCMOS process—QUBiC1. The low-band is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz with 17.5 dB of gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain and an IIP3 of +5 dBm.
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