Full PDF Text Transcription for BUK9508-55A (Reference)
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BUK9508-55A. For precise diagrams, and layout, please refer to the original PDF.
Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transisto...
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ON N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9508-55A BUK9608-55A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V V GS = 10 V MAX. 55 75 200 175 8 7.3 UNIT V A W ˚C mΩ mΩ PINNING TO220AB & SOT404 PIN 1 2 3 DESCRIPTION gate drain source ww re .nu at an
BUK9508-55A Datasheet
