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BUK9508-55B - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant 1.3.

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Full PDF Text Transcription for BUK9508-55B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK9508-55B. For precise diagrams, and layout, please refer to the original PDF.

BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mod...

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profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant 1.3 Applications  12 V and 24 V loads  Automotive systems 1.4 Quick reference data Table 1. VDS ID Symbol Parameter ww re .nu at an e ce.

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