BLU60-12 Datasheet PDF (UHF power transistor)

BLU60-12 - UHF power transistor

This page provides the datasheet information for the BLU60-12, a member of the BLU60 UHF power transistor family.

Description

N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

Features

multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
internal matching to achieve an optimum wideband capability and high power gain.
gold metallization ensures excellent reliability. QUICK.

Datasheet Details

Part number	BLU60-12
Manufacturer	Philips
File Size	82.58 KB
Description	UHF power transistor
Datasheet	BLU60-12 Datasheet
Additional preview pages of the BLU60-12 datasheet.

📁 Similar Datasheet

BLU6H0410L-600P - Power LDMOS transistor (Ampleon)

BLU6H0410L-600P - Power LDMOS transistor (NXP)

BLU6H0410LS-600P - Power LDMOS transistor (Ampleon)

BLU6H0410LS-600P - Power LDMOS transistor (NXP)

BLU-0201 - (BLU Series) Ultra Precision Thin Film Chip Resistors (RCD Components)

BLU-0402 - (BLU Series) Ultra Precision Thin Film Chip Resistors (RCD Components)

BLU-0603 - (BLU Series) Ultra Precision Thin Film Chip Resistors (RCD Components)

BLU-0805 - (BLU Series) Ultra Precision Thin Film Chip Resistors (RCD Components)

BLU-1206 - (BLU Series) Ultra Precision Thin Film Chip Resistors (RCD Components)

BLU-1210 - (BLU Series) Ultra Precision Thin Film Chip Resistors (RCD Components)

Full PDF Text Transcription

Click to expand full text

DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product speciﬁcation March 1986 http://www.Datasheet4U.com Philips Semiconductors Product speciﬁcation UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile. • internal matching to achieve an optimum wideband capability and high power gain. • gold metallization ensures excellent reliability. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w.

Published: May 5, 2014 |