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DISCRETE SEMICONDUCTORS
DATA SHEET
BLU11/SL UHF power transistor
Product specification July 1986
http://www.Datasheet4U.com
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic cap (SOT-122D). All leads are isolated from the mounting base. QUICK REFERENCE DATA R.F. performance in a common-emitter class-B circuit.