Datasheet4U Logo Datasheet4U.com

MA3X199 - Silicon epitaxial planar type

Key Features

  • High breakdown voltage: VR = 200 V.
  • Short reverse recovery time trr.
  • Small package, allowing automatic mounting 0.65 ± 0.15 1.5.
  • 0.05 + 0.25 0.95 1.9 ± 0.2 2.9.
  • 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Note).
  • : t = 1 s VR VRRM IF(AV) IFRM IFSM T.

📥 Download Datasheet

Datasheet Details

Part number MA3X199
Manufacturer Panasonic
File Size 46.32 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X199 Datasheet

Other Datasheets by Panasonic

Part Number Description
MA3X198 Silicon epitaxial planar type
MA3X152A Silicon epitaxial planar type Switching Diodes
MA3X152D Silicon epitaxial planar type Switching Diodes
MA3X152E Silicon epitaxial planar type Switching Diodes
MA3X152K Silicon epitaxial planar type Switching Diodes
MA3X153 Silicon epitaxial planar type Switching Diodes
MA3X153A Silicon epitaxial planar type Switching Diodes
MA3X157A Silicon epitaxial planar type Switching Diodes
MA3X158 Silicon epitaxial planar type Switching Diodes
MA3X028 Silicon epitaxial planar type variable resistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Switching Diodes MA3X199 Silicon epitaxial planar type 2.8 − 0.3 + 0.2 Unit : mm 0.65 ± 0.15 For high voltage switching circuit I Features • High breakdown voltage: VR = 200 V • Short reverse recovery time trr • Small package, allowing automatic mounting 0.65 ± 0.15 1.5 − 0.05 + 0.25 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s VR VRRM IF(AV) IFRM IFSM Tj Tstg 200 250 100 225 500 150 −55 to +150 V V mA mA mA °C °C 0.1 to 0.3 0.4 ± 0.2 1.1 0.