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MA3X157A - Silicon epitaxial planar type Switching Diodes

Key Features

  • 1 3 2 0.95 1.45 0 to 0.1 1.1.
  • 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Repetitive peak forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Note).
  • : t = 1 s Single Series Single Series Single Series Tj Tstg IFSM IFRM Symbol VR VRM IF Rating 80 80 100 65 225 145 500 325 150.
  • 55 to +150 °C °C mA mA Unit V V mA 0.1 to 0.3 0.4 ± 0.2 1 : Anode 1 2 :.

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Datasheet Details

Part number MA3X157A
Manufacturer Panasonic
File Size 47.70 KB
Description Silicon epitaxial planar type Switching Diodes
Datasheet download datasheet MA3X157A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes MA3X157A Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.95 • High switching speed • Small terminal capacitance, Ct • Both chips have even characteristics • Can be connected in series 1.9 ± 0.2 2.9 − 0.05 + 0.2 I Features 1 3 2 0.95 1.45 0 to 0.1 1.1 − 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Series Single Series Single Series Tj Tstg IFSM IFRM Symbol VR VRM IF Rating 80 80 100 65 225 145 500 325 150 −55 to +150 °C °C mA mA Unit V V mA 0.1 to 0.3 0.4 ± 0.