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Switching Diodes
MA2C188
Silicon epitaxial planar type
Unit : mm
For high speed and high voltage switching, small-power rectification I Features
• Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole • High voltage (VR: 200 V) rectification is possible
φ 0.45 max. COLORED BAND INDICATES CATHODE 1
0.2 max. 13 min.
0.2 max.
Parameter Reverse voltage (DC) Peak reverse voltage Average power dissipation Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s
Symbol VR VRM PF(AV) IO IFRM IFSM Tj Tstg
Rating 200 250 400 200 625 1 175 −65 to +175
Unit V V mW mA mA A °C °C
2
φ 1.75 max.