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Switching Diodes
MA2C185
Silicon epitaxial planar type
Unit : mm
For high-voltage switching circuits, small power rectification I Features
• High reverse voltage (VR = 200 V) • Large output current IO • Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole
COLORED BAND INDICATES CATHODE
φ 0.45 max. 1
0.2 max.
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Output current Repetitive peak reverse current Non-repetitive peak forward surge current surge current* Average power dissipation Junction temperature Storage temperature Note) * : t = l s Symbol VR VRRM IO IFRM IFSM PF(AV) Tj Tstg Rating 200 250 200 625 1 400 175 −65 to +175 Unit V V mA mA A mW °C °C
2
φ 1.75 max.