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K1867 - Silicon N-Channel Power F-MOS FET

Key Features

  • q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown q Allowing to supply by the radial taping s.

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Datasheet Details

Part number K1867
Manufacturer Panasonic
File Size 166.11 KB
Description Silicon N-Channel Power F-MOS FET
Datasheet download datasheet K1867 Datasheet

Full PDF Text Transcription for K1867 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1867. For precise diagrams, and layout, please refer to the original PDF.

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eneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu 18.0±0.5aendc Solder Dip lifecycle stage.