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K1833 - 2SK1833

Key Features

  • q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 30ns q No secondary breakdown s.

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Full PDF Text Transcription for K1833 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1833. For precise diagrams, and layout, please refer to the original PDF.

Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q High-speed switching: ...

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aranteed: EAS > 90mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 30ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Avalanche energy capacity VDSS VGSS ID IDP EAS* 500 ±30 ±2.5 ±5 15.6 Allowable power dissipation TC = 25°C Ta = 25°C PD 40 2 Channel temperature Storage temperature Tch 150 Tstg −55 to +150 * L = 5mH, IL = 2.

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