FC8V33030L - Dual N-channel MOSFET

Product Overview

Panasonic

Part number	FC8V33030L
Manufacturer	Panasonic
File Size	322.08 KB
Description	Dual N-channel MOSFET
Datasheet	FC8V33030L Datasheet
Additional preview pages of the FC8V33030L datasheet.

s y Low drain-source ON resistance:RDS(on)typ. = 22 mΩ (VGS = 4.5 V) y High-speed switching :Qg = 3.8 nC y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant).
Marking Symbol:6A.
Basic Part Number Dual Nch MOS 33 V (Individual).
Packaging FC8V33030L　Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard).
Absolute Maximum Ratings　Ta = 25 °C Parameter Symbol Rating Drain-source Voltage VDS 33 Gate-source Voltage.

📁 Similar Datasheet

FC801 - Composite Diode for High-Speed Switching Applications (Sanyo Semicon Device)
FC802 - Composite Diode for High-Speed Switching Applications (Sanyo Semicon Device)
FC803 - 30V/ 70mA Rectifier (Sanyo Semicon Device)
FC804 - 30V/ 200mA Rectifier (Sanyo Semicon Device)
FC805 - 30V/ 500mA Rectifier (Sanyo Semicon Device)
FC806 - 50V/ 100mA Rectifier (Sanyo Semicon Device)
FC807 - High-Speed Switching Composite Diode Anode Common (Sanyo Semicon Device)
FC808 - High-Speed Switching Composite Diode Cathode Common (Sanyo Semicon Device)

Other Datasheets by Panasonic

Published: Sep 22, 2017 |