FC8V3303 - Silicon N-channel MOS FET

Product Overview

Panasonic

Part number	FC8V3303
Manufacturer	Panasonic
File Size	395.55 KB
Description	Silicon N-channel MOS FET
Datasheet	FC8V3303 Datasheet
Additional preview pages of the FC8V3303 datasheet.

s.
N-channel dual type.
Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V).
Small size surface mounting package: WMini8-F1 (2.9 mm × 2.8 mm × 0.8 mm).
Contributes to miniaturization of sets, mount area reduction.
Eco-friendly Halogen-free package.
Packaging FC8V33030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surre.

📁 Similar Datasheet

FC801 - Composite Diode for High-Speed Switching Applications (Sanyo Semicon Device)
FC802 - Composite Diode for High-Speed Switching Applications (Sanyo Semicon Device)
FC803 - 30V/ 70mA Rectifier (Sanyo Semicon Device)
FC804 - 30V/ 200mA Rectifier (Sanyo Semicon Device)
FC805 - 30V/ 500mA Rectifier (Sanyo Semicon Device)
FC806 - 50V/ 100mA Rectifier (Sanyo Semicon Device)
FC807 - High-Speed Switching Composite Diode Anode Common (Sanyo Semicon Device)
FC808 - High-Speed Switching Composite Diode Cathode Common (Sanyo Semicon Device)

Other Datasheets by Panasonic

Published: Sep 22, 2017 |