Note: Below is a high-fidelity text extraction (approx. 800 characters) for
C3974. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC3974 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3....
View more extracted text
peed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1 / ■ Absolute Maximum Ratings TC = 25°C 16.2±0.5 (3.5) Solder Dip 1.1±0.1 0.6±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 800 V c e.
C3974 Datasheet
