q High-speed switching
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2 2.7±0.2
4.2±0.2
16.7±0.3 7.5±0.2
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
φ3.1±0.1
q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with
/ one screw
1.3±0.2 1.4±0.1
s Absolute Maximum Ratings (TC=25˚C)
e pe) Parameter
Symbol
Ratings
Unit
14.0±0.5 Solder Dip 4.0
nc d ge. ed ty Collector to 2SC3972
800
sta tinu base vo.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
C3972. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC3972, 2SC3972A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed switching 0....
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age high-speed switching Unit: mm s Features q High-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.1±0.1 q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with / one screw 1.3±0.2 1.4±0.1 s Absolute Maximum Ratings (TC=25˚C) e pe) Parameter Symbol Ratings Unit 14.0±0.5 Solder Dip 4.0 nc d ge.
C3972 Datasheet
