C3757 - Silicon NPN Transistor

Datasheet Summary

Features

s.
Low collector-emitter saturation voltage VCE(sat).
Mini type package, allowing downsizing of the equipment and au- 0.40+.
00..0150 3 0.16+.
00..0160 0.4±0.2 1.50.
+00..0255 2.8.
+00..32 tomatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 5˚ (0.65) 1.9±0.1 /.
Absolute Maximum Ratings Ta = 25°C 2.90+.
00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open).

Panasonic

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Datasheet Details

Part number	C3757
Manufacturer	Panasonic
File Size	222.22 KB
Description	Silicon NPN Transistor
Datasheet	C3757 Datasheet
Additional preview pages of the C3757 datasheet.

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Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and au- 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 tomatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 40 V c e. d ty Collector-emitter voltage (E-B short) VCES 40 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 0 to 0.1 1.1–+00..12 1.1–+00..

Published: Mar 1, 2021 |