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B1156 - Silicon PNP epitaxial planar type Transistor

Features

  • q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings.
  • 130.
  • 80.
  • 7.
  • 30.
  • 20 100 3 150.
  • 55 to +150 Unit V V V A A W ˚C ˚C 21.0±0.5 15.0±0.2 Low collector to emitter sa.

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Datasheet Details

Part number B1156
Manufacturer Panasonic
File Size 61.05 KB
Description Silicon PNP epitaxial planar type Transistor
Datasheet download datasheet B1156 Datasheet
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Full PDF Text Transcription

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Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –130 –80 –7 –30 –20 100 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 21.0±0.5 15.0±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.
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