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B1155 - 2SB1155

Features

  • q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VC.

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Datasheet Details

Part number B1155
Manufacturer Panasonic
File Size 59.76 KB
Description 2SB1155
Datasheet download datasheet B1155 Datasheet
Additional preview pages of the B1155 datasheet.

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Full PDF Text Transcription

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Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 21.0±0.5 16.2±0.
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